1 MUR8100E/d MUR8100E, mur880e power rectifiers ultrafast ?e?? series with high reverse energy capability the mur8100 and mur880e diodes are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? 20 mj avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175 c operating junction temperature ? popular t o?220 package ? epoxy meets ul 94 v?0 @ 0.125 in. ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? reverse voltage to 1000 v ? pb?free packages are available* mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ultrafast rectifiers 8.0 a, 800 v ? 1000 v 1 3 4 http://kersemi.com to?220ac case 221b 4 3 1 marking diagram ay wwg u8xxxe ka a = assembly location y = year ww = work week g = pb?free package u8xxxe = device code xxx = 100 or 80 ka = diode polarity
MUR8100E, mur880e http://kersemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mur880e MUR8100E v rrm v rwm v r 800 1000 v average rectified forward current (rated v r , t c = 150 c) total device i f(av) 8.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 150 c) i fm 16 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction and storage temperature range t j , t stg ?65 to +175 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol value unit maximum thermal resistance, junction?to?case r jc 2.0 c/w electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 1) (i f = 8.0 a, t c = 150 c) (i f = 8.0 a, t c = 25 c) v f 1.5 1.8 v maximum instantaneous reverse current (note 1) (rated dc voltage, t c = 100 c) (rated dc voltage, t c = 25 c) i r 500 25 a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 a/ s) (i f = 0.5 a, i r = 1.0 a, i rec = 0.25 a) t rr 100 75 ns controlled avalanche energy (see test circuit in figure 6) w aval 20 mj
MUR8100E, mur880e http://kersemi.com 3 * the curves shown are typical for the highest voltage device in the voltage * grouping. typical reverse current for lower voltage selections can be * estimated from these same curves if v r is sufficiently below rated v r . figure 1. typical forward voltage figure 2. typical reverse current* figure 3. current derating, case figure 4. current derating, ambient figure 5. power dissipation 1.8 0.4 v f , instantaneous voltage (volts) 100 50 5.0 10 3.0 v r , reverse voltage (volts) 0 10 0.1 0.01 t c , case temperature ( c) 150 140 10 3.0 2.0 1.0 0 20 60 0 t a , ambient temperature ( c) 8.0 6.0 4.0 2.0 0 i f(av) , average forward current (amps) 1.0 0 14 10 8.0 2.0 0 4.0 40 i f , instantaneous forward current (amps) i i 0.7 0.5 1.2 0.8 1.0 1.4 1.6 200 400 600 800 1000 1.0 100 10,000 170 180 , average forward current (amps) i f(av) 80 120 100 10 2.0 3.0 5.0 6.0 p f(av) , average power dissipation (watts) 2.0 20 0.1 0.3 7.0 1.0 30 , reverse current ( a) r 160 140 160 200 180 , average forward current (amps) f(av) 6.0 5.0 4.0 9.0 8.0 7.0 6.0 9.0 7.0 8.0 10 7.0 5.0 3.0 1.0 9.0 t j = 175 c square wave dc rated v r applied square wave dc t j = 25 c 100 c 150 c t j = 175 c 25 c 100 c 70 0.2 1000 4.0 12 r ja = 16 c/w r ja = 60 c/w (no heat sink) square wave dc square wave dc 0.6 175 c
MUR8100E, mur880e http://kersemi.com 4 t 0 t 1 t 2 t v dd i d i l bv dut mercury switch figure 6. test circuit figure 7. current?voltage waveforms +v dd dut 40 h coil v d i l s 1 i d the unclamped inductive switching circuit shown in figure 6 was used to demonstrate the controlled avalanche capability of the new ?e?? series ultrafast rectifiers. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). the oscilloscope picture in figure 8, shows the MUR8100E in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 v, and using equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. although it is not recommended to design for this condition, the new ?e?? series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. w aval 1 2 li 2 lpk bv dut bv dut ?v dd w aval 1 2 li 2 lpk figure 8. current?voltage waveforms channel 2 : i l 0.5 amps/div. channel 1 : v dut 500 volts/div. time base : 20 s/div. equation (1): equation (2): ch1 ch2 ref ref ch1 ch2 acquisitions saveref source 1 217:33 hrs stack a 20 s 953 v vert 500v 50mv
MUR8100E, mur880e http://kersemi.com 5 t, time (ms) 100 1.0 0.5 0.07 0.05 0.01 v r , reverse voltage (volts) 10 1.0 1000 300 100 30 10 c, capacitance (pf) 2.0 5.0 10 20 50 0.3 0.7 1.0 100 r(t), transient thermal resistance 0.2 0.1 0.03 0.02 0.01 0.02 0.05 0.1 0.2 0.5 200 500 1000 t j = 25 c (normalized) figure 9. thermal response figure 10. typical capacitance d = 0.5 0.1 0.05 0.01 single pulse z jc (t) = r(t) r jc r jc = 1.5 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
MUR8100E, mur880e http://onsemi.com 6 package dimensions to?220 two?lead case 221b?04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f MUR8100E/d http://kersemi.com
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